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| 書誌情報 | ファイル |
|---|---|
| Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching Nakamura, S; Kimoto, T; Matsunami, H; Tanaka, S; Teraguchi, N; Suzuki, A (2000) APPLIED PHYSICS LETTERS, 76(23): 3412-3414 | |
| MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation Yano, H; Kimoto, T; Matsunami, H; Bassler, M; Pensl, G (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1109-1112 | |
| High channel mobility in inversion layer of SiC MOSFETs for power switching transistors Yano, H; Hirao, T; Kimoto, T; Matsunami, H (2000) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39(4B): 2008-2011 | |
| Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics Miyamoto, N; Saitoh, A; Kimoto, T; Matsunami, H; Hishida, Y; Watanabe, M (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1347-1350 | |
| SiC MISFETs with MBE-grown AlN gate dielectric Zetterling, CM; Ostling, M; Yano, H; Kimoto, T; Matsunami, H; Linthicum, K; Davis, RF (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1315-1318 | |
| In-situ RHEED analysis during alpha-SiC homoepitaxy on (0001)Si- and (000(1)over-bar)C-faces by gas source molecular beam epitaxy Hatayama, T; Fuyuki, T; Nakamura, S; Kurobe, K; Kimoto, T; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 361-364 | |
| Deep Level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC Schoner, A; Miyamoto, N; Kimoto, T; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-3: 451-454 | |
| Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Asano, K; Sugawara, Y (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1105-1108 | |
| Nuclear transmutation doping of phosphorus into 6H-SiC Tamura, S; Kimoto, T; Matsunami, H; Okada, M; Kanazawa, S; Kimura, I (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 849-852 | |
| Recent progress in SiC epitaxial growth and device processing technology Kimoto, T; Yano, H; Tamura, S; Miyamoto, N; Fujihira, K; Negoro, Y; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-3: 543-548 |