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| 書誌情報 | ファイル |
|---|---|
| Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117 | |
| Short-Channel Effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 821-824 | |
| Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(1AB): L40-L42 | |
| Scanning capacitance microscopy of SiC multiple PN junction structure grown by cold-wall chemical vapor deposition Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 659-662 | |
| 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication Onojima, N; Suda, J; Kimoto, T; Matsunami, H (2003) APPLIED PHYSICS LETTERS, 83(25): 5208-5210 | |
| SiC lateral super-junction diodes fabricated by epitaxial growth Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 859-862 | |
| Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication Kawano, H; Kimoto, T; Suda, J; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 809-812 | |
| Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005-01) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117 |  |
| Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2003) IEEE ELECTRON DEVICE LETTERS, 24(5): 321-323 | |
| Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy Onojima, N; Kaido, J; Suda, J; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 1569-1572 |
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