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| 書誌情報 | ファイル |
|---|---|
| Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117 | |
| Short-Channel Effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 821-824 | |
| Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T (2005) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9): 1954-1962 | |
| Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005-01) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117 |  |
| Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T (2005-09) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9): 1954-1962 | |
| Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation Kimoto, T; Kanzaki, Y; Noborio, M; Kawano, H; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 44(3): 1213-1218 | |
| High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient Kanzaki, Y; Kinbara, H; Kosugi, H; Suda, J; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 1429-1432 |
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