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| 書誌情報 | ファイル |
|---|---|
| High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition Nakazawa, S; Kimoto, T; Hashimoto, K; Matsunami, H (2002) JOURNAL OF CRYSTAL GROWTH, 237: 1213-1218 | |
| Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition Kimoto, T; Tamura, S; Chen, Y; Fujihira, K; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4B): L374-L376 | |
| Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation Kimoto, T; Kanzaki, Y; Noborio, M; Kawano, H; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 44(3): 1213-1218 | |
| Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) Kimoto, T; Hashimoto, K; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12): 7294-7295 | |
| Performance limiting surface defects in SiC epitaxial p-n junction diodes Kimoto, T; Miyamoto, N; Matsunami, H (1999) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 471-477 | |
| Robust 4H-SiC pn diodes fabricated using (1120) face Negoro, Y; Kimoto, T; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(2): 471-476 | |
| High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers Danno, K; Kimoto, T (2006) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45(8-11): L285-L287 | |
| Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics Negoro, Y; Kimoto, T; Kataoka, M; Takeuchi, Y; Malhan, RK; Matsunami, H (2006) MICROELECTRONIC ENGINEERING, 83(1): 27-29 |
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