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| 書誌情報 | ファイル |
|---|---|
| SiC MISFETs with MBE-grown AlN gate dielectric Zetterling, CM; Ostling, M; Yano, H; Kimoto, T; Matsunami, H; Linthicum, K; Davis, RF (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1315-1318 | |
| Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition Fujiwara, H; Danno, K; Kimoto, T; Tojo, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 205-208 | |
| Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition Kimoto, T; Chen, ZY; Tamura, S; Nakamura, S; Onojima, N; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(5A): 3315-3319 | |
| Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) APPLIED PHYSICS LETTERS, 80(2): 240-242 | |
| The development of 4H-SiC {03(3)over-bar8) wafers Nakayama, K; Miyanagi, Y; Shiomi, H; Nishino, S; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 123-126 | |
| Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Bai, S; Wagner, G; Shishkin, E; Choyke, WJ; Devaty, RP; Zhang, M; Pirouz, P; Kimoto, T (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 589-592 | |
| Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition Danno, K; Kimoto, T; Asano, K; Sugawara, Y; Matsunami, H (2005) JOURNAL OF ELECTRONIC MATERIALS, 34(4): 324-329 | |
| Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's Yano, H; Katafuchi, F; Kimoto, T; Matsunami, H (1999) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 504-510 | |
| Specular surface morphology of 4H-SiC epilayers grown on (1120) face Chen, ZY; Kimoto, T; Matsunami, H (1999) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 38(12A): L1375-L1378 | |
| Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T (2005) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9): 1954-1962 |