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| 書誌情報 | ファイル |
|---|---|
| Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Shiomi, H (2002-12-16) Applied Physics Letters, 81(25): 4772-4774 |  |
| Recent achievements and future challenges in SiC homoepitaxial growth Kimoto, T; Nakazawa, S; Fujihira, K; Hirao, T; Nakamura, S; Chen, Y; Hashimoto, K; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 165-170 | |
| High channel mobility in inversion layer of SiC MOSFETs for power switching transistors Yano, H; Hirao, T; Kimoto, T; Matsunami, H (2000) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39(4B): 2008-2011 | |
| Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Shiomi, H (2002) APPLIED PHYSICS LETTERS, 81(25): 4772-4774 | |
| Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Kimoto, T; Hirao, T; Fujihira, K; Kosugi, H; Danno, K; Matsunami, H (2003) APPLIED SURFACE SCIENCE, 216(1-4): 497-501 | |
| Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Asano, K; Sugawara, Y (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1105-1108 | |
| Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition Kimoto, T; Hirao, T; Nakazawa, S; Shiomi, H; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 249(1-2): 208-215 | |
| A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face Yano, H; Hirao, T; Kimoto, T; Matsunami, H (2001) APPLIED PHYSICS LETTERS, 78(3): 374-376 |
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