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| 書誌情報 | ファイル |
|---|---|
| High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face Danno, K; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 197-200 | |
| Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A): 4909-4910 | |
| SiC epitaxy on non-standard surfaces Matsunami, H; Kimoto, T (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 125-130 | |
| Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition Fujiwara, H; Danno, K; Kimoto, T; Tojo, T; Matsunami, H (2005) JOURNAL OF CRYSTAL GROWTH, 281(2-4): 370-376 | |
| Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition Kimoto, T; Chen, ZY; Tamura, S; Nakamura, S; Onojima, N; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(5A): 3315-3319 | |
| Specular surface morphology of 4H-SiC epilayers grown on (1120) face Chen, ZY; Kimoto, T; Matsunami, H (1999) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 38(12A): L1375-L1378 | |
| High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes Tamura, S; Fujihira, K; Kimoto, T; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4A): L319-L322 | |
| Homoepitaxial growth of 4H-SiC on trenched substrates by chemical vapor deposition Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 189-192 | |
| High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition Nakazawa, S; Kimoto, T; Hashimoto, K; Matsunami, H (2002) JOURNAL OF CRYSTAL GROWTH, 237: 1213-1218 | |
| Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition Kimoto, T; Tamura, S; Chen, Y; Fujihira, K; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4B): L374-L376 |