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| 書誌情報 | ファイル |
|---|---|
| Recent achievements and future challenges in SiC homoepitaxial growth Kimoto, T; Nakazawa, S; Fujihira, K; Hirao, T; Nakamura, S; Chen, Y; Hashimoto, K; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 165-170 | |
| Wide-area homoepitaxial growth of 6H-SiC on nearly on-axis (0001) by chemical vapor deposition Nakamura, S; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 149-152 | |
| Homoepitaxial growth of 4H-SiC on trenched substrates by chemical vapor deposition Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 189-192 | |
| Surface mechanisms in homoepitaxial growth on alpha-SiC {0001}-vicinal faces Nakamura, S; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 163-168 | |
| Recent progress in SiC epitaxial growth and device processing technology Kimoto, T; Yano, H; Tamura, S; Miyamoto, N; Fujihira, K; Negoro, Y; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-3: 543-548 | |
| 4H-SiC (11(2)over-bar-0) epitaxial growth Kimoto, T; Yamamoto, T; Chen, ZY; Yano, H; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 189-192 | |
| Uniformity improvement in SiC epitaxial growth by horizontal hot-wall CVD Saitoh, H; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 185-188 | |
| 4H-SiC epitaxial growth on SiC substrates with various off-angles Saitoh, H; Kimoto, T (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 89-92 |