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| 書誌情報 | ファイル |
|---|---|
| Electrical activation of high-concentration aluminum implanted in 4H-SiC Negoro, Y; Kimoto, T; Matsunami, H; Schmid, F; Pensl, G (2004-11-01) Journal of Applied Physics, 96(9): 4916-4922 |  |
| Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H (2004-07-01) Journal of Applied Physics, 96(1): 224-228 | |
| Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing Negoro, Y; Kimoto, T; Matsunami, H (2004-09-06) Applied Physics Letters, 85(10): 1716-1718 | |
| Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 933-936 | |
| Electrical activation of high-concentration aluminum implanted in 4H-SiC Negoro, Y; Kimoto, T; Matsunami, H; Schmid, F; Pensl, G (2004) JOURNAL OF APPLIED PHYSICS, 96(9): 4916-4922 | |
| Defect formation in (0001)- and (1120)-oriented 4H-SiC crystals P+-Implanted at room temperature Okada, T; Negoro, Y; Kimoto, T; Okamoto, K; Kujime, N; Tanaka, N; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(10): 6884-6889 | |
| Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing Negoro, Y; Kimoto, T; Matsunami, H (2004) APPLIED PHYSICS LETTERS, 85(10): 1716-1718 | |
| Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H (2004) JOURNAL OF APPLIED PHYSICS, 96(1): 224-228 | |
| Robust 4H-SiC pn diodes fabricated using (1120) face Negoro, Y; Kimoto, T; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(2): 471-476 | |
| Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H; Schmid, F; Pensl, G (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 913-916 |