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| 書誌情報 | ファイル |
|---|---|
| High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation Negoro, Y; Kimoto, T; Matsunami, H (2003) ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86(12): 44-51 | |
| Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions Nakamura, S; Kimoto, T; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 256(3-4): 341-346 | |
| 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication Onojima, N; Suda, J; Kimoto, T; Matsunami, H (2003) APPLIED PHYSICS LETTERS, 83(25): 5208-5210 | |
| Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Kimoto, T; Hirao, T; Fujihira, K; Kosugi, H; Danno, K; Matsunami, H (2003) APPLIED SURFACE SCIENCE, 216(1-4): 497-501 | |
| Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition Fujihira, K; Kimoto, T; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 255(1-2): 136-144 | |
| Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2003) IEEE ELECTRON DEVICE LETTERS, 24(5): 321-323 | |
| Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps Nakamura, S; Kimoto, T; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 256(3-4): 347-351 | |
| Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC Okada, T; Kimoto, T; Yamai, K; Matsunami, H; Inoko, F (2003) MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 361(1-2): 67-74 | |
| High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes Kimoto, T; Fujimiza, K; Shiomi, H; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(1A-B): L13-L16 | |
| Hetero-interface properties of SiO2/4H-SiC on various crystal orientations Matsunami, H; Kimoto, T; Yano, H (2003) IEICE TRANSACTIONS ON ELECTRONICS, E86C(10): 1943-1948 |