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書誌情報ファイル
Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates
  Armitage, R; Suda, J; Kimoto, T (2006)
  APPLIED PHYSICS LETTERS, 88(1)
High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy
  Horita, M; Suda, J; Kimoto, T (2006-09-11)
  APPLIED PHYSICS LETTERS, 89(11)
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Source of surface morphological defects formed on 4H-SiC homoepitaxial films
  Okada, T; Ochi, K; Kawahara, H; Tomita, T; Matsuo, S; Yamaguchi, M; Higashimine, K; Kimoto, T (2006)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(10A): 7625-7631
Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth
  Armitage, R; Suda, J; Kimoto, T (2006)
  SURFACE SCIENCE, 600(7): 1439-1449
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
  Kamiyama, S; Maeda, T; Nakamura, Y; Iwaya, M; Amano, H; Akasaki, I; Kinoshita, H; Furusho, T; Yoshimoto, M; Kimoto, T; Suda, J; Henry, A; Ivanov, IG; Bergman, JP; Monemar, B; Onuma, T; Chichibu, SF (2006)
  JOURNAL OF APPLIED PHYSICS, 99(9)
Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
  Danno, K; Kimoto, T (2006)
  JOURNAL OF APPLIED PHYSICS, 100(11)
Epitaxial growth of 4H-SIC on 4 degrees off-axis (0001) and (0001) substrates by hot-wall chemical vapor deposition
  Wada, K; Kimoto, T; Nishikawa, K; Matsunami, H (2006)
  JOURNAL OF CRYSTAL GROWTH, 291(2): 370-374
Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage
  Funaki, T; Matsuzaki, S; Kimoto, T; Hikihara, T (2006)
  IEICE ELECTRONICS EXPRESS, 3(16): 379-384
High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers
  Danno, K; Kimoto, T (2006)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45(8-11): L285-L287
Epitaxial growth of 4H-SiC{0001} and reduction of deep levels
  Kimoto, T; Wada, K; Danno, K (2006)
  SUPERLATTICES AND MICROSTRUCTURES, 40(4-6): 225-232