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| 書誌情報 | ファイル |
|---|---|
| Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T (2005) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9): 1954-1962 | |
| Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication Kawano, H; Kimoto, T; Suda, J; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 809-812 | |
| Single crystal growth of 3C-SiC on 15R-SiC Nakamura, S; Hatayama, T; Nishino, K; Kimoto, T; Matsunami, H (1999) COMPOUND SEMICONDUCTORS 1998, 162: 717-722 | |
| Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001) Armitage, R; Nishizono, K; Suda, J; Kimoto, T (2005) JOURNAL OF CRYSTAL GROWTH, 284(3-4): 369-378 | |
| 600V 4H-SiC RESURF-type JFET Fujikawa, K; Harada, S; Ito, A; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 1189-1192 | |
| Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005-01) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117 |  |
| Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes Fujiwara, H; Kimoto, T; Tojo, T; Matsunami, H (2005-08-01) Applied Physics Letters, 87(5) | |
| 4H-SiC lateral double RESURF MOSFETs with low ON resistance Noborio, M; Suda, J; Kimoto, T (2007-05) IEEE TRANSACTIONS ON ELECTRON DEVICES, 54(5): 1216-1223 | |
| Performance limiting surface defects in SiC epitaxial p-n junction diodes Kimoto, T; Miyamoto, N; Matsunami, H (1999-03) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 471-477 | |
| Power conversion with SiC devices at extremely high ambient temperatures Funaki, T; Balda, JC; Junghans, J; Kashyap, AS; Mantooth, HA; Barlow, F; Kimoto, T; Hikihara, T (2007-07) IEEE TRANSACTIONS ON POWER ELECTRONICS, 22(4): 1321-1329 | |