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| 書誌情報 | ファイル |
|---|---|
| Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation Danno, K; Nakamura, D; Kimoto, T (2007-05-14) APPLIED PHYSICS LETTERS, 90(20) |  |
| Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers Danno, K; Kimoto, T (2007-05-15) JOURNAL OF APPLIED PHYSICS, 101(10) | |
| Impacts of growth parameters on deep levels in n-type 4H-SiC Danno, K; Hori, T; Kimoto, T (2007-03-01) JOURNAL OF APPLIED PHYSICS, 101(5) | |
| High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy Horita, M; Suda, J; Kimoto, T (2006-09-11) APPLIED PHYSICS LETTERS, 89(11) | |
| Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's Yano, H; Katafuchi, F; Kimoto, T; Matsunami, H (1999-03) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 504-510 | |
| 1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET Kimoto, T; Kawano, H; Suda, J (2005-09) IEEE ELECTRON DEVICE LETTERS, 26(9): 649-651 | |
| Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T (2005-09) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9): 1954-1962 | |
| Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode Fujihira, K; Tamura, S; Kimoto, T; Matsunami, H (2002-01) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(1): 150-154 | |
| Chemical vapor deposition and deep level analyses of 4H-SiC(11(2)over-bar0) Kimoto, T; Yamamoto, T; Chen, ZY; Yano, H; Matsunami, H (2001) JOURNAL OF APPLIED PHYSICS, 89(11): 6105-6109 | |
| 4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching Wahab, Q; Kosugi, H; Yano, H; Hallin, C; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 1215-1218 |