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書誌情報	ファイル
High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation Negoro, Y; Kimoto, T; Matsunami, H (2003) ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86(12): 44-51
Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(7A): 4105-4109
Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2005) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(7A): 4909-4910
Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510
Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Kimoto, T; Hirao, T; Fujihira, K; Kosugi, H; Danno, K; Matsunami, H (2003) APPLIED SURFACE SCIENCE, 216(1-4): 497-501
Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition Kimoto, T; Chen, ZY; Tamura, S; Nakamura, S; Onojima, N; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(5A): 3315-3319
Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's Yano, H; Katafuchi, F; Kimoto, T; Matsunami, H (1999) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 504-510
High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes Kimoto, T; Fujimiza, K; Shiomi, H; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(1A-B): L13-L16
Hetero-interface properties of SiO2/4H-SiC on various crystal orientations Matsunami, H; Kimoto, T; Yano, H (2003) IEICE TRANSACTIONS ON ELECTRONICS, E86C(10): 1943-1948
High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes Tamura, S; Fujihira, K; Kimoto, T; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4A): L319-L322