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| 書誌情報 | ファイル |
|---|---|
| Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Shiomi, H (2002-12-16) Applied Physics Letters, 81(25): 4772-4774 |  |
| Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces Yano, H; Kimoto, T; Matsunami, H (2002-07-08) Applied Physics Letters, 81(2): 301-303 | |
| MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation Yano, H; Kimoto, T; Matsunami, H; Bassler, M; Pensl, G (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1109-1112 | |
| High channel mobility in inversion layer of SiC MOSFETs for power switching transistors Yano, H; Hirao, T; Kimoto, T; Matsunami, H (2000) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 39(4B): 2008-2011 | |
| Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Shiomi, H (2002) APPLIED PHYSICS LETTERS, 81(25): 4772-4774 | |
| SiC MISFETs with MBE-grown AlN gate dielectric Zetterling, CM; Ostling, M; Yano, H; Kimoto, T; Matsunami, H; Linthicum, K; Davis, RF (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1315-1318 | |
| Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's Yano, H; Katafuchi, F; Kimoto, T; Matsunami, H (1999) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 504-510 | |
| Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's Yano, H; Katafuchi, F; Kimoto, T; Matsunami, H (1999-03) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 504-510 | |
| Chemical vapor deposition and deep level analyses of 4H-SiC(11(2)over-bar0) Kimoto, T; Yamamoto, T; Chen, ZY; Yano, H; Matsunami, H (2001) JOURNAL OF APPLIED PHYSICS, 89(11): 6105-6109 | |
| 4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching Wahab, Q; Kosugi, H; Yano, H; Hallin, C; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 1215-1218 |
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