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| 書誌情報 | ファイル |
|---|---|
| High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face Danno, K; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 197-200 | |
| Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition Danno, K; Hashimoto, K; Saitoh, H; Kimoto, T; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 43(7B): L969-L971 | |
| Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition Kimoto, T; Tamura, S; Chen, Y; Fujihira, K; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4B): L374-L376 | |
| Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) Kimoto, T; Hashimoto, K; Matsunami, H (2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12): 7294-7295 | |
| Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD Wada, A; Kimoto, T; Nishikawa, K; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 85-88 | |
| Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS Danno, K; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 355-358 | |
| High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers Danno, K; Kimoto, T (2006) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 45(8-11): L285-L287 | |
| Epitaxial growth of 4H-SiC{0001} and reduction of deep levels Kimoto, T; Wada, K; Danno, K (2006) SUPERLATTICES AND MICROSTRUCTURES, 40(4-6): 225-232 | |
| Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition Kato, M; Tanaka, S; Ichimura, M; Arai, E; Nakamura, S; Kimoto, T (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 381-384 |