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| 書誌情報 | ファイル |
|---|---|
| Electrical activation of high-concentration aluminum implanted in 4H-SiC Negoro, Y; Kimoto, T; Matsunami, H; Schmid, F; Pensl, G (2004-11-01) Journal of Applied Physics, 96(9): 4916-4922 |  |
| Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H (2004-07-01) Journal of Applied Physics, 96(1): 224-228 | |
| Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing Negoro, Y; Kimoto, T; Matsunami, H (2004-09-06) Applied Physics Letters, 85(10): 1716-1718 | |
| High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face Danno, K; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 197-200 | |
| Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2004) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 43(7A): 4105-4109 | |
| Rate-determining process in chemical vapor deposition of SiC on off-axis alpha-SiC (0001) Nakamura, S; Kimoto, T; Matsunami, H (2004) JOURNAL OF CRYSTAL GROWTH, 270(3-4): 455-461 | |
| Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition Fujiwara, H; Danno, K; Kimoto, T; Tojo, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 205-208 | |
| 600V 4H-SiC RESURF-type JFET Fujikawa, K; Harada, S; Ito, A; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 1189-1192 | |
| Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 933-936 | |
| Homoepitaxial growth of 4H-SiC on trenched substrates by chemical vapor deposition Chen, Y; Kimoto, T; Takeuchi, Y; Malhan, RK; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 189-192 |