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書誌情報ファイル
Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk
  Bardoux, R.; Kaneta, A.; Funato, M.; Kawakami, Y.; Kikuchi, A.; Kishino, K. (2009-04)
  PHYSICAL REVIEW B, 79(15)
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Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x > 0.69)
  Banal, R. G.; Funato, M.; Kawakami, Y. (2009-03)
  PHYSICAL REVIEW B, 79(12)
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Near-field evidence of local polarized emission centers in InGaN/GaN materials
  Micheletto, Ruggero; Allegrini, Maria; Kawakami, Yoichi (2009-11)
  APPLIED PHYSICS LETTERS, 95(21)
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Near-field evidence of local polarized emission centers in InGaN/GaN materials
  Micheletto, Ruggero; Allegrini, Maria; Kawakami, Yoichi (2009)
  APPLIED PHYSICS LETTERS, 95(21)
Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk
  Bardoux, R.; Kaneta, A.; Funato, M.; Kawakami, Y.; Kikuchi, A.; Kishino, K. (2009)
  PHYSICAL REVIEW B, 79(15)
Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x > 0.69)
  Banal, R. G.; Funato, M.; Kawakami, Y. (2009)
  PHYSICAL REVIEW B, 79(12)
Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching
  Kawakami, Y.; Kaneta, A.; Su, L.; Zhu, Y.; Okamoto, K.; Funato, M.; Kikuchi, A.; Kishino, K. (2010)
  JOURNAL OF APPLIED PHYSICS, 107(2)
Semipolar {n[n¯]01} InGaN/GaN ridge quantum wells (n = 1−3) fabricated by a regrowth technique
  Funato, Mitsuru; Kotani, Teruhisa; Kondou, Takeshi; Kawakami, Yoichi (2012-04)
  Applied Physics Letters, 100(16)
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Micromirror arrays to assess luminescent nano-objects.
  Kawakami, Yoichi; Kanai, Akinobu; Kaneta, Akio; Funato, Mitsuru; Kikuchi, Akihiko; Kishino, Katsumi (2011-05)
  The Review of scientific instruments, 82(5)
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Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching
  Kawakami, Y.; Kaneta, A.; Su, L.; Zhu, Y.; Okamoto, K.; Funato, M.; Kikuchi, A.; Kishino, K. (2010-01)
  JOURNAL OF APPLIED PHYSICS, 107(2)
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