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書誌情報	ファイル
Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers Camarda, Massimo; Canino, Andrea; La Magna, Antonino; La Via, Francesco; Feng, G.; Kimoto, T.; Aoki, M.; Kawanowa, H. (2011-02) APPLIED PHYSICS LETTERS, 98(5)
Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2011-08-01) JOURNAL OF APPLIED PHYSICS, 110(3)
Boron-ketoiminate-based polymers: fine-tuning of the emission color and expression of strong emission both in the solution and film States. Yoshii, Ryousuke; Nagai, Atsushi; Tanaka, Kazuo; Chujo, Yoshiki (2014-05-21) Macromolecular rapid communications, 35(15): 1315-1319
Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn+ ions Dang, Giang T.; Kawaharamura, Toshiyuki; Nitta, Noriko; Hirao, Takashi; Yoshiie, Toshimasa; Taniwaki, Masafumi (2011-06) JOURNAL OF APPLIED PHYSICS, 109(12)
Luminescence of black silicon fabricated by high-repetition rate femtosecond laser pulses Chen, Tao; Si, Jinhai; Hou, Xun; Kanehira, Shingo; Miura, Kiyotaka; Hirao, Kazuyuki (2011-10-01) JOURNAL OF APPLIED PHYSICS, 110(7)
Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk Bardoux, R.; Kaneta, A.; Funato, M.; Kawakami, Y.; Kikuchi, A.; Kishino, K. (2009-04) PHYSICAL REVIEW B, 79(15)
Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x > 0.69) Banal, R. G.; Funato, M.; Kawakami, Y. (2009-03) PHYSICAL REVIEW B, 79(12)
Triple Shockley type stacking faults in 4H-SiC epilayers Feng, Gan; Suda, Jun; Kimoto, Tsunenobu (2009-03) APPLIED PHYSICS LETTERS, 94(9)
Near-field evidence of local polarized emission centers in InGaN/GaN materials Micheletto, Ruggero; Allegrini, Maria; Kawakami, Yoichi (2009-11) APPLIED PHYSICS LETTERS, 95(21)
Reduction in surface recombination and enhancement of light emission in silicon photonic crystals treated by high-pressure water-vapor annealing Fujita, Masayuki; Gelloz, Bernard; Koshida, Nobuyoshi; Noda, Susumu (2010-09-20) Applied Physics Letters, 97(12)