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| 書誌情報 | ファイル |
|---|---|
| Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002-01-14) Applied Physics Letters, 80(2): 240-242 |  |
| High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition Fujihira, K; Kimoto, T; Matsunami, H (2002-03-04) Applied Physics Letters, 80(9): 1586-1588 | |
| Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Shiomi, H (2002-12-16) Applied Physics Letters, 81(25): 4772-4774 | |
| Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces Yano, H; Kimoto, T; Matsunami, H (2002-07-08) Applied Physics Letters, 81(2): 301-303 | |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002-09) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition Nakamura, S; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 183-186 | |
| High temperature deep level transient spectroscopy investigations of n-type 4H-SiC epitaxial layers Schoner, A; Fujihira, K; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 387-390 | |
| Complete micropipe dissociation in 4H-SiC(03(3)over-bar8) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes Kimoto, T; Danno, K; Fujihira, K; Shiomi, H; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 197-200 | |
| Scanning capacitance and spreading resistance microscopy of SiC multiple-pn-junction structure Suda, J; Nakamura, S; Miura, M; Kimoto, T; Matsunami, H (2002) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(1AB): L40-L42 | |
| Recent achievements and future challenges in SiC homoepitaxial growth Kimoto, T; Nakazawa, S; Fujihira, K; Hirao, T; Nakamura, S; Chen, Y; Hashimoto, K; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 165-170 |