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| 書誌情報 | ファイル |
|---|---|
| Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002-01-14) Applied Physics Letters, 80(2): 240-242 |  |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002-09) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics Miyamoto, N; Saitoh, A; Kimoto, T; Matsunami, H; Hishida, Y; Watanabe, M (2000) SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1347-1350 | |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) APPLIED PHYSICS LETTERS, 80(2): 240-242 | |
| Performance limiting surface defects in SiC epitaxial p-n junction diodes Kimoto, T; Miyamoto, N; Matsunami, H (1999-03) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 471-477 | |
| High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes Kimoto, T; Miyamoto, N; Schoner, A; Saitoh, A; Matsunami, H; Asano, K; Sugawara, Y (2002) JOURNAL OF APPLIED PHYSICS, 91(7): 4242-4248 | |
| Phosphorus ion implantation into 4H-SiC (0001) and (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 783-786 | |
| Deep Level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC Schoner, A; Miyamoto, N; Kimoto, T; Matsunami, H (2000) SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 353-3: 451-454 | |
| Performance limiting surface defects in SiC epitaxial p-n junction diodes Kimoto, T; Miyamoto, N; Matsunami, H (1999) IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(3): 471-477 |