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| 書誌情報 | ファイル |
|---|---|
| Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002-01-14) Applied Physics Letters, 80(2): 240-242 |  |
| Electrical activation of high-concentration aluminum implanted in 4H-SiC Negoro, Y; Kimoto, T; Matsunami, H; Schmid, F; Pensl, G (2004-11-01) Journal of Applied Physics, 96(9): 4916-4922 | |
| Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H (2004-07-01) Journal of Applied Physics, 96(1): 224-228 | |
| Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing Negoro, Y; Kimoto, T; Matsunami, H (2004-09-06) Applied Physics Letters, 85(10): 1716-1718 | |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002-09) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation Negoro, Y; Kimoto, T; Matsunami, H (2003) ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86(12): 44-51 | |
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0) Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) APPLIED PHYSICS LETTERS, 80(2): 240-242 | |
| Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap Negoro, Y; Katsumoto, K; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 933-936 | |
| Technological aspects of ion implantation in SiC device processes Negoro, Y; Kimoto, T; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 599-604 |
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