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| 書誌情報 | ファイル |
|---|---|
| 600V 4H-SiC RESURF-type JFET Fujikawa, K; Harada, S; Ito, A; Kimoto, T; Matsunami, H (2004) SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 457-460: 1189-1192 | |
| Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005-01) IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117 |  |
| Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes Fujiwara, H; Kimoto, T; Tojo, T; Matsunami, H (2005-08-01) Applied Physics Letters, 87(5) | |
| 4H-SiC lateral double RESURF MOSFETs with low ON resistance Noborio, M; Suda, J; Kimoto, T (2007-05) IEEE TRANSACTIONS ON ELECTRON DEVICES, 54(5): 1216-1223 | |
| Power conversion with SiC devices at extremely high ambient temperatures Funaki, T; Balda, JC; Junghans, J; Kashyap, AS; Mantooth, HA; Barlow, F; Kimoto, T; Hikihara, T (2007-07) IEEE TRANSACTIONS ON POWER ELECTRONICS, 22(4): 1321-1329 | |
| Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation Danno, K; Nakamura, D; Kimoto, T (2007-05-14) APPLIED PHYSICS LETTERS, 90(20) | |
| Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers Danno, K; Kimoto, T (2007-05-15) JOURNAL OF APPLIED PHYSICS, 101(10) | |
| Impacts of growth parameters on deep levels in n-type 4H-SiC Danno, K; Hori, T; Kimoto, T (2007-03-01) JOURNAL OF APPLIED PHYSICS, 101(5) | |
| High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy Horita, M; Suda, J; Kimoto, T (2006-09-11) APPLIED PHYSICS LETTERS, 89(11) | |
| 1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET Kimoto, T; Kawano, H; Suda, J (2005-09) IEEE ELECTRON DEVICE LETTERS, 26(9): 649-651 | |
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