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| 書誌情報 | ファイル |
|---|---|
| Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps Okumura, Hironori; Kimoto, Tsunenobu; Suda, Jun (2014-08-18) Applied Physics Letters, 105(7) |  |
| P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing Noborio, Masato; Suda, Jun; Kimoto, Tsunenobu (2009-09) IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(9): 1953-1958 | |
| 1580-V-40-m Omega . cm(2) Double-RESURF MOSFETs on 4H-SiC (000(1)over-bar) Noborio, Masato; Suda, Jun; Kimoto, Tsunenobu (2009-08) IEEE ELECTRON DEVICE LETTERS, 30(8): 831-833 | |
| Chemical vapor deposition and deep level analyses of 4H-SiC(11(2)over-bar0) Kimoto, Tsunenobu; Yamamoto, Toshiyuki; Chen, Zhi Ying; Yano, Hiroshi; Matsunami, Hiroyuki (2001-06-01) Journal of Applied Physics, 89(11): 6105-6109 | |
| Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition Kimoto, Tsunenobu; Nakazawa, Satoshi; Hashimoto, Koichi; Matsunami, Hiroyuki (2001-10-22) Applied Physics Letters, 79(17): 2761-2763 | |
| Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching Nakamura, Shun-ichi; Kimoto, Tsunenobu; Matsunami, Hiroyuki; Tanaka, Satoru; Teraguchi, Nobuaki; Suzuki, Akira (2000-06-05) Applied Physics Letters, 76(23): 3412-3414 | |
| A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face Yano, Hiroshi; Hirao, Taichi; Kimoto, Tsunenobu; Matsunami, Hiroyuki (2001-01-15) Applied Physics Letters, 78(3): 374-376 | |
| Single-crystalline 4H-SiC micro cantilevers with a high quality factor Adachi, Kohei; Watanabe, Naoki; Okamoto, Hajime; Yamaguchi, Hiroshi; Kimoto, Tsunenobu; Suda, Jun (2013-08) Sensors and Actuators A: Physical, 197: 122-125 | |
| Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure Nanen, Yuichiro; Yoshioka, Hironori; Noborio, Masato; Suda, Jun; Kimoto, Tsunenobu (2009-11) IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(11): 2632-2637 | |
| The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 degrees C Watanabe, Naoki; Kimoto, Tsunenobu; Suda, Jun (2008-11-15) JOURNAL OF APPLIED PHYSICS, 104(10) | |